bipolarics, inc. part number bta105m2 npn silicon matched microwave transistors advance data sheet features: high gain bandwidth product f t = 10 ghz matched performance ? v be = 25 mv ? ?= 0.6:1 max benefits/applications: low cost auto insertion device tracking (monolithic) ? high speed precision switching differential oscillators/buffers the bta105m2 is a monolithic silicon npn matched transistor pair which features typical f t of 10 ghz at 10 ma. this matched pair offers superior performance and reliability at low cost. plastic surface mount (so-8), hermetic surface mount and unencapsulated chips are available. these devices are well suited to very high speed switching and differential oscillator applications. two devices can be used as a current source biased differential amplifier for very low voltage applications. symbol parameters & conditions unit min. typ. max. min. typ. max. f t gain bandwidth product at ghz 8.0 10 8.0 10 difference in v be at i e = mv 25 25 10 ma as larger-smaller difference in current gain at ratio 0.6 0.6 i e = 10 ma as smaller: larger insertion power gain at db 17 17 v ce = 8v, i c =10 ma , f = 1 ghz opt. noise figure at v ce = 8v, db 1.5 1.5 i c = 2 ma, f = 1 ghz package plastic hermetic top view pin assignment 2 4 5 6 7 8 3 case emitter 1 emitter 2 collector 2 collector 1 base 2 base 1 description and applications: v ce = 8v, i c = 10 ma nf o |s 21 | 2 ? h fe ? v be performance characteristics (t a = 25 o c) performance data: 1 case case
npn silicon matched microwave transistors advance data sheet bipolarics, inc. part number bta105m2 page 2 ? electrical characteristics ( t a = 25 o c ) package plastic hermetic symbol parameters & conditions units min. typ. max min. typ. max. i cbo collector cutoff current at a 10 10 v cb = 10v, i e = 0 h fe forward current gain at 30 150 300 30 150 300 v ce = 8v, i c = 20 ma, f = 1.0 ghz c ob output capacitance at pf 0.35 0.35 v cb = 10v, i e = 0, f = 1.0 mhz ? absolute maximum ratings ( t a = 25 o c ) v cbo collector-base voltage v 18 v ceo collector-base voltage v 10 v ebo emitter-base voltage v 3 i c collector current ma 40 t j operating junction temperature o c 175 t stg storage temperature o c -65 to +150 symbol parameters/conditions units rating bipolarics, inc. 46 766 la ke vie w bl vd. f re mo nt, ca 94 53 8 phone: ( 51 0 ) 22 6- 65 65 fax: ( 51 0 ) 22 6- 67 65
page 3 freq. s11 s21 s12 s22 s21 ghz mag ang mag ang mag ang mag ang db 0.05000 0.706 - 10.4 18.238 171.9 0.004 92.0 0.983 - 4.0 25.22 0.10000 0.701 - 20.0 18.140 165.3 0.007 82.5 0.977 - 7.4 25.17 0.20000 0.681 - 38.9 16.945 152.5 0.015 79.2 0.946 -14.3 24.58 0.30000 0.670 - 56.6 15.313 140.6 0.022 70.3 0.895 -20.7 23.70 0.40000 0.621 - 73.4 13.927 130.4 0.026 64.9 0.831 -26.0 22.88 0.50000 0.589 - 87.2 12.428 122.1 0.031 60.6 0.768 -30.0 21.89 0.60000 0.559 - 98.4 10.996 115.6 0.034 56.6 0.713 -32.5 20.82 0.70000 0.544 -107.9 9.857 109.5 0.037 53.9 0.660 -34.4 19.87 0.80000 0.520 -116.4 8.832 105.1 0.039 52.7 0.624 -35.7 18.92 0.90000 0.502 -123.8 8.025 101.1 0.040 50.7 0.590 -37.0 18.09 1.00000 0.489 -129.7 7.291 98.0 0.042 49.7 0.567 -37.6 17.26 1.20000 0.476 -139.6 6.185 91.4 0.045 48.2 0.522 -38.4 15.83 1.40000 0.468 -147.4 5.357 86.5 0.048 49.1 0.495 -39.4 14.58 1.60000 0.461 -154.1 4.744 82.1 0.050 49.3 0.471 -40.3 13.52 1.80000 0.456 -159.5 4.226 77.9 0.053 50.8 0.457 -41.5 12.52 2.00000 0.458 -164.0 3.836 74.3 0.056 52.4 0.443 -43.4 11.68 2.20000 0.456 -168.9 3.528 70.7 0.059 53.1 0.428 -45.5 10.95 2.40000 0.460 -171.9 3.200 67.5 0.063 54.1 0.425 -46.9 10.10 2.60000 0.462 -174.8 2.981 64.9 0.065 55.2 0.419 -48.5 9.49 2.80000 0.466 -177.5 2.755 61.7 0.069 55.7 0.416 -50.1 8.80 3.00000 0.469 178.8 2.591 58.8 0.072 56.2 0.407 -52.4 8.27 3.25000 0.474 175.4 2.402 55.0 0.076 57.3 0.400 -55.2 7.61 3.50000 0.482 172.2 2.237 51.4 0.082 59.5 0.394 -58.5 6.99 3.75000 0.489 169.3 2.093 48.0 0.086 59.0 0.392 -61.5 6.42 4.00000 0.496 166.6 1.967 44.5 0.092 59.1 0.385 -65.1 5.88 4.25000 0.503 164.2 1.855 41.3 0.097 59.8 0.380 -68.9 5.37 4.50000 0.512 161.8 1.755 37.9 0.103 59.2 0.376 -72.9 4.89 4.75000 0.520 159.8 1.659 34.7 0.108 59.6 0.374 -77.3 4.40 5.00000 0.530 157.6 1.579 31.4 0.115 59.4 0.371 -81.8 3.97 typical s parameters: bias condition: v ce = 8 v, v be = 0.83 v, i c = 10 ma s-matrix: z s = 50.0 + j 0.0 z l = 50.0 + j 0.0 advance data sheet bipolarics, inc. part number bta105m2 npn silicon matched microwave transistors
page 4 freq. k sign avail. stable source load ghz b1 db db mag ang mag ang 0.05000 0.052 + 36.59 0.10000 0.092 + 36.14 0.20000 0.072 + 30.53 0.30000 0.144 + 28.43 0.40000 0.228 + 27.29 0.50000 0.315 + 26.03 0.60000 0.421 + 25.10 0.70000 0.518 + 24.26 0.80000 0.611 + 23.55 0.90000 0.720 + 23.02 1.00000 0.800 + 22.40 1.20000 0.967 + 21.38 1.40000 1.092 + 18.63 0.785 157.1 0.795 48.1 1.60000 1.231 + 16.88 0.694 162.0 0.699 47.9 1.80000 1.331 + 15.57 0.655 166.1 0.656 48.0 2.00000 1.402 + 14.58 0.639 169.2 0.630 49.0 2.20000 1.477 + 13.68 0.620 173.1 0.603 50.2 2.40000 1.519 + 12.81 0.617 175.5 0.594 51.1 2.60000 1.585 + 12.12 0.608 177.7 0.580 52.0 2.80000 1.611 + 11.43 0.608 -180.0 0.575 53.3 3.00000 1.651 + 10.84 0.604 -177.0 0.563 54.9 3.25000 1.687 + 10.16 0.603 -174.2 0.554 56.9 3.50000 1.670 + 9.58 0.612 -171.8 0.553 59.1 3.75000 1.687 + 9.03 0.615 -169.2 0.550 61.7 4.00000 1.674 + 8.50 0.622 -166.9 0.548 64.6 4.25000 1.676 + 8.01 0.626 -165.0 0.544 67.5 4.50000 1.652 + 7.59 0.636 -162.9 0.546 70.9 4.75000 1.650 + 7.15 0.642 -161.3 0.545 74.3 5.00000 1.608 + 6.80 0.654 -159.5 0.550 77.8 typical s parameters: (continued) bias condition: v ce = 8 v, v be = 0.83 v, i c = 10 ma s-matrix: z s = 50.0 + j 0.0 z l = 50.0 + j 0.0 maximum gain conjugate match gamma advance data sheet npn silicon matched microwave transistors bipolarics, inc. part number b t a105m2
bipolarics, inc. part number b t a105m2 page 5 ordering information: p/n including pkg temp range/app bta105m2 - a/00 -55 to +125 bta105m2 - b/ s 8 -40 to + 85 bta105m2 - a/08 -55 to +125 package outlines: bipolarics, inc. 46 76 6 la k ev ie w blv d . frem on t, ca 94 5 38 phone: ( 51 0 ) 22 6- 65 65 fax: ( 51 0 ) 22 6 - 67 65 08 package: so-8 hermetic s 8 package: so-8 plastic 1. dimensions are in (mm) npn silicon matched microwave transistors advance data sheet notes: (unless otherwise specified) 2. tolerances: in .xxx = .005 mm .xx = .13 3. all dimensions nominal; subject to change without notice
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